Trends in High-Power Laser Development Projects
نویسندگان
چکیده
منابع مشابه
emittance control in high power linacs
چکیده این پایان نامه به بررسی اثر سیم پیچ مغناطیسی و کاوه یِ خوشه گر با بسامد رادیویی بر هاله و بیرونگراییِ باریکه هایِ پیوسته و خوشه ایِ ذرات باردار در شتابدهنده های خطیِ یونی، پروتونی با جریان بالا می پردازد و راه حل هایی برای بهینه نگهداشتن این کمیتها ارایه می دهد. بیرونگرایی یکی از کمیتهای اساسی باریکه هایِ ذرات باردار در شتابدهنده ها است که تاثیر قابل توجهی بر قیمت، هزینه و کاراییِ هر شتابدهند...
Development of high-power laser coatings
Laser resistance and stress-free mirrors, windows, polarizers, and beam splitters up to 400 mm × 400 mm are required for the construction of the series SG facilities. In order to improve the coating quality, a program has been in place for the last ten years. For the small-aperture pick-off mirror, the laser-induced damage threshold (LIDT) is above 60 J/cm2 (1064 nm, 3 ns), and the reflected wa...
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The actual market volume of high-power lasers for manufacturing is dominated by diffusion cooled CO2 laser systems at the multi-kW range and lamp pumped Nd:YAG laser systems at the kW range. Substituting the lamps by diodes the Nd:YAG laser in rod design entered the market as diode pumped solid state laser of the first generation. With output powers up to 6 kW the diode pumped rod is used in in...
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To access the green spectral range for display applications, high-power optically pumped semiconductor disk lasers (OPSDLs) in combination with second-harmonic generation have been realized. A frequency-doubled output exceeding 9.5W is achieved at a wavelength of 520 nm. The wavelength of these devices can be tuned over a rather broad range of more than 20 nm in the second-harmonic regime. In t...
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Silicon based high power devices continue to play an enabling role in modern high power systems, especially in the fields of traction, industrial and grid applications. Today, approximately 30 years after its invention, a Bipolar-MOS “BiMOS” controlled switch referred to as the Insulated Gate Bipolar Transistor IGBT is the device of choice for the majority of power electronics converters with p...
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ژورنال
عنوان ژورنال: The Review of Laser Engineering
سال: 2008
ISSN: 0387-0200,1349-6603
DOI: 10.2184/lsj.36.279